PART |
Description |
Maker |
BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C) TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
7MBP10PE120 7MBR10PE120 |
IGBT module (S series) IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
ITT, Corp.
|
GP300LSS16S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|独立| 1.6KV五(巴西)国际消费电子展| 300我(丙)
|
TE Connectivity, Ltd.
|
PM600HHA060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C) 晶体管| IGBT功率模块|独立| 600V的五(巴西)国际消费电子展| 601余(丙)
|
Mitsubishi Electric, Corp.
|
CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五(巴西)国际消费电子展|甲一(c
|
ITT, Corp.
|
CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
|
Vishay Intertechnology, Inc.
|
CM100TF12E |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 100号A一(c
|
KOA Speer Electronics,Inc.
|